Chanzon 100pcs 2SC1623 SOT-23 NPN Power BJT Bipolar Junction Transistor | SMD for power management motor control switching circuits($5.99Value)

Description

Transistor Type: High-Frequency NPN Power Bipolar Junction Transistor. Transistor Polarity: NPN Transistor, complement to 2SA812. Specification: Features Vcbo up to 60V, Vceo up to 50V, Vebo up to 5V, Ic up to 0.1A, and power dissipation Pc up to 0.2W. Application: Typically used in high-frequency amplification and switching in a variety of electronic circuits. Package: Supplied in a SOT-23 package, packed in Anti-Static bag for ESD protection and long shelf life.

High-Performance SOT-23 NPN Transistor

Elevate your electronic projects with our SOT-23 NPN transistor, designed for high efficiency and reliability.

Key Features

• High DC Current Gain: hFE = 200 (typical) at VCE = 6V, IC = 1mA
• High Voltage Support: VCEO = 50V for robust applications
• Fast Switching: Transition frequency fT = 250 MHz, ideal for high-speed operations

Electrical CharacteristicsEnsure optimal performance with these key electrical specifications:

• Collector-Base Breakdown Voltage (V(BR)CBO): Min 60V
• Collector-Emitter Breakdown Voltage (V(BR)CEO): Min 50V
• Emitter-Base Breakdown Voltage (V(BR)EBO): Min 5V
• DC Current Gain Range: 90-600 depending on classification
• Collector-Emitter Saturation Voltage (VCE(sat)): 0.3V at IC = 100mA, IB = 10mA

Operational AmplificationAchieve precise control with a wide range of DC current gain classifications:

• Class L4: 90-180
• Class L5: 135-270
• Class L6: 200-400
• Class L7: 300-600

Maximum RatingsOperate with confidence within these maximum limits:

• Collector-Base Voltage (VCBO): 60V
• Collector Current (IC): 100mA
• Collector Power Dissipation (PC): 200mW
• Thermally Efficient: RΘJA = 625℃/W